Nanowire FET having induced radial strain

ABSTRACT

An intermediate process device is provided and includes a nanowire connecting first and second silicon-on-insulator (SOI) pads, a gate including a gate conductor surrounding the nanowire and poly-Si surrounding the gate conductor and silicide forming metal disposed to react with the poly-Si to form a fully silicided (FUSI) material to induce radial strain in the nanowire.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional of and claims the benefit of priorityto U.S. application Ser. No. 12/631,203, now allowed, which was filed onDec. 4, 2009. The entire contents of U.S. application Ser. No.12/631,203 are incorporated herein by reference.

BACKGROUND

Aspects of the present invention are directed to a nanowire field effecttransistor (FET) and, more particularly, to a nanowire FET with a metalgate that is surrounded with silicide around the metal gate for inducingradial and, in some cases, longitudinal strain in the nanowire channel.

In a field effect transistor (FET) with nanowire channels, it ispossible to induce longitudinal strain in the nanowires since therelatively small diameters of the nanowires leads to efficient straincoupling from a stressor. While longitudinal strain was studied indetail in planar devices and more recently longitudinal tensile strainwas demonstrated with nanowire FETs, the effect of radial strain on thecarrier transport in nanowires is unknown.

One of the main challenges with studying the impact of radial strain ina nanowire FET is that the gate material needs to be varied to changethe strain level. Altering the gate conductor changes the induced strainbut also other properties of the device such as the work function.Additionally, the use of different gate materials requires substantialprocessing development.

SUMMARY

In accordance with an aspect of the invention, an intermediate processdevice is provided and includes a nanowire connecting first and secondsilicon-on-insulator (SOI) pads, a gate including a gate conductorsurrounding the nanowire and poly-Si surrounding the gate conductor andsilicide forming metal disposed to react with the poly-Si to form afully silicided (FUSI) material to induce radial strain on the nanowire.

In accordance with an aspect of the invention, an intermediate processdevice is provided and includes first and second pads, a nanowire,formed in a silicon-on-insulator (SOI) layer disposed over a buriedoxide (BOX) layer, connecting the first and second pads, a gatesurrounding the nanowire and including a dielectric adjacent thenanowire, a gate conductor adjacent the dielectric and poly-Sisurrounding the gate conductor and silicide forming metal disposed atleast along sidewalls of the poly-Si to react with the poly-Si to form afully silicided (FUSI) material to induce radial strain in the nanowire.

In accordance with an aspect of the invention, a method to induce radialstrain in a field effect transistor (FET) nanowire is provided andincludes surrounding the nanowire with a gate conductor and surroundingthe gate conductor with poly-Si, and reacting the poly-Si with silicideforming metal deposited thereon to form a fully silicided (FUSI)material to induce radial strain in the nanowire prior to fabrication ofsource and drain regions relative to the nanowire.

In accordance with another aspect of the invention, a method to induceradial strain in a field effect transistor (FET) nanowire is providedand includes surrounding the nanowire with a gate conductor andsurrounding the gate conductor with poly-Si, reacting the poly-Si withsilicide forming metal deposited thereon to form a fully silicided(FUSI) material to induce radial strain in the nanowire, forming spacerson opposing sides of the FUSI material, and fabricating source and drainregions relative to the nanowire subsequent to the reacting.

BRIEF DESCRIPTIONS OF THE SEVERAL VIEWS OF THE DRAWINGS

The subject matter regarded as the invention is particularly pointed outand distinctly claimed in the claims at the conclusion of thespecification. The foregoing and other aspects, features, and advantagesof the invention are apparent from the following detailed descriptiontaken in conjunction with the accompanying drawings in which:

FIG. 1 is a perspective view of a nanowire under strain;

FIGS. 2A and 2B are views of a nanowire extending across a recessedoxide;

FIGS. 3A and 3B are views of a reshaped nanowire extending across therecessed oxide;

FIGS. 4A and 4B are views of a nanowire and a poly-Si coated with a gatedielectric and partially coated with TaN;

FIGS. 4C and 4D are views of the nanowire and the poly-Si fully coatedwith the gate dielectric and the TaN;

FIG. 5 is a side sectional view of a metallic coating;

FIG. 6 is a side sectional view of a FUSI stressor;

FIG. 7 is a side sectional view of the FUSI stressor of FIG. 6 withspacers;

FIG. 8 is a side sectional view of the FUSI stressor of FIG. 6 withspacers and epitaxy; and

FIG. 9 is a side sectional view of the FUSI stressor of FIG. 6 withspacers and epitaxy and a silicide coating.

DETAILED DESCRIPTION

The present techniques provide a gate-all-around (GAA) nanowire fieldeffect transistor (FET) as well as methods for fabricating the same. Inthis discussion, reference will be made to various drawings thatillustrate embodiments of the present teachings. Since the drawings ofthe embodiments of the present teachings are provided for illustrativepurposes, the structures contained therein are not drawn to scale.

The present methods are described using silicon (Si) nanowires and Siprocessing. However, the present techniques can also be practiced withother semiconductor materials such as, for example, germanium (Ge) orIII-V semiconductors. When non-Si-containing semiconductors are used,the processing steps of the present teachings are basically the sameexcept that growth temperature and dopant species applied are adapted tothe specific semiconductor used. Use of Si-containing semiconductormaterials such as Si, silicon germanium (SiGe), Si/SiGe, silicon carbide(SiC) or silicon germanium carbide (SiGeC), for example, are preferredhowever. It is noted that a portion of the nanowires is used herein asthe device channel or body.

With reference to FIG. 1, in an FET with a nanowire channel 10, it ispossible to relatively efficiently induce radial strain (Δr/r) as wellas longitudinal strain (ΔL/L), with r and L being the nanowire's radiusand length, respectively, and Δr and ΔL being the change in radius andthe change in length, respectively, as a result of stress. The smalldiameter of the nanowire 11 leads to efficient strain coupling from astressor with a residual stress, P, such as the material that wouldnormally surround the nanowire 11 that generates a residual stress, C,in the nanowire. While longitudinal strain has been studied in detail inplanar devices and, more recently, longitudinal tensile strain wasdemonstrated with nanowire FETs, the effect of radial strain on thecarrier transport in nanowires is currently unknown due to the factthat, in studying the impact of radial strain in a nanowire FET, it hasbeen necessary to vary the gate conductor material to change the strainlevel. While altering the gate conductor material changes the inducedstrain, the alteration requires substantial processing development andthe varied gate conductor material changes other properties of therelevant device, such as the work function and threshold voltage.

In accordance with aspects of the present invention, a method to induceradial strain and, in some cases, longitudinal strain in a nanowirechannel, without the need to change the gate conductor or the processthat is used to define the gate is provided and makes use of a thinmetal all-around-gate (e.g., about 2-4 nm and, in some cases, about 3 nmthick tantalum nitride (TaN)) while the “filler” material that connectsall the nanowires' metal gates and forms a solid gate line is initiallypoly-Si that is later converted into fully silicided material (FUSI).The FUSI surrounding the metal gate effectively induces strain in thenanowire channel, but does not impact other device properties (such asthe work function) since the latter is set by the metal gate. The gatedefinition process, therefore, remains substantially constant even ifvarious silicides are used for the FUSI.

With reference to FIGS. 2-9, the device structure and process operationsare summarized and relate to processes in which a FUSI gate may beformed at an elevated temperature and before source/drain implantation.These processes will be referred to generally as a “FUSI first” process.

With reference to FIGS. 2A and 2B, a wafer is provided and includes a Sisubstrate 101, a buried oxide (BOX) layer 102 and a silicon-on-insulator(SOI) layer 103. The wafer can be fabricated using methods such asSeparation by IMplanted OXygen (SIMOX) or wafer bonding (for example,SmartCut™). These wafer fabrication techniques are known to those ofskill in the art and thus are not described further herein. Also, thesubstitution of other SOI substrates known in the art for the SOI on BOXconfiguration described herein may be made and would be within the scopeof the present teachings.

Nanowires 104 connected to SOI pads 103A are patterned in SOI layer 103to form a ladder-like structure. SOI layer 103 is made to have a typicalthickness of about 20-30 nanometers (nm). As a result the as-patternednanowires 104 have a height that is about 20-30 nm. A width of thenanowires 104 can be in the range of about 10-30 nm. The patterning ofthe nanowires 104 and SOI pads 103A may be achieved by lithography(e.g., optical or e-beam) followed by reactive ion etching (RIE) or by asidewall transfer technique. These patterning techniques are known tothose of skill in the art and thus are not described further herein.

The nanowires 104 can be suspended or released from the BOX layer 102 byetching and a recessing of the BOX layer 102 under the nanowires 104.The nanowires 104 thus form a suspended bridge over recessed oxide 105between the SOI pads 103A. The recessing of the BOX layer 102 can beachieved with a diluted hydrofluoric (DHF) etch. The lateral componentof this etching undercuts the BOX layer 102 under the nanowires 104.Alternatively, the suspension of the nanowires 104 may be obtainedduring an annealing process to re-shape the nanowires 104.

While SOI substrates provide an easy path to define and suspendnanowires 104, it is possible to obtain suspended nanowires 104 withother substrates. For example, a SiGe/Si stack epitaxially grown on bulkSi wafers can also be patterned to form the nanowires 104. The SiGelayer can be used as a sacrificial layer (analogous to the BOX layer102) which is undercut to suspend the nanowires 104.

The nanowires 104 are then reshaped to form reshaped nanowires 108, asshown in FIGS. 3A and 3B. Here, the reshaping refers to a smoothing ofthe respective surfaces of the nanowires 104 to thereby change theirrespective cross-sections to be more cylindrical, and to a thinning ofthe respective nanowire 104 bodies by moving silicon from the nanowire104 bodies to the SOI pads 103A. As an example, the reshaped nanowires108 may be formed by an annealing process during which the SOI wafercontacts an inert gas at a temperature, pressure and for a duration thatis sufficient to cause Si to migrate from the nanowires 104 to the SOIpads 103A. Here, the term “inert gas” refers to a gas that does notreact with Si and may include hydrogen (H₂), xenon (Xe), helium (He) andpotentially others.

Still referring to FIGS. 3A and 3B, it is seen that the wafer may beannealed in an exemplary H₂ gas. Shortly before H₂ annealing, nativeoxide is etched off from the surfaces of the nanowires 104 and the SOIpads 103A. The annealing in H₂ smoothes the nanowire sidewalls, realignsthe sidewalls and the SOI pads 103A and re-shapes the nanowire 104cross-section from a rectangular cross-section to a more cylindricalcross-section. The H₂ anneal may also thin the nanowire 104 body byre-distributing Si to the SOI pads 103A.

According to an exemplary embodiment, the inert gas anneal may beperformed with a gas pressure of from about 30 torr to about 1000 torr,at a temperature of from about 600 degrees Celsius (° C.) to about 1100°C. and for a duration of about 1-120 minutes. In general, the rate of Sire-distribution increases with temperature and decrease with an increasein pressure.

With reference to FIGS. 4A-4D, a conformal gate dielectric 112 isdeposited over the structure. The gate dielectric 112 may includesilicon dioxide (SiO₂), silicon oxynitride (SiON), hafnium oxide (HfO₂)or any other suitable hi-K dielectric(s) and may be deposited over SOIpads 103A and around the reshaped nanowires 108 using chemical vapordeposition (CVD), atomic layer deposition (ALD) or an oxidation furnacein the case of SiO₂ and SiON. A conformal deposition of a thin gateconductor 117 of, e.g., TaN or TiN, is then conducted and followed by adeposition of poly-Si 113 to form a gate stack 118 perimetricallysurrounding the reshaped nanowire 108. A mask 115 is employed tofacilitate the etching of a gate line by reactive ion etching (RIE). Thethin gate conductor 117 may be removed by RIE as shown in FIGS. 4A and4B. Alternatively, the removal of the thin gate conductor 117 fromsurfaces outside gate line 118A may require an additional wet etch stepas shown in FIGS. 4C and 4D.

As an example, to fabricate a poly-Si gate, a poly-Si 113 is blanketdeposited. Using lithography and selective RIE (e.g., hydrogen bromide(HBr)-based chemistry) the poly-Si 113 is selectively etched exceptwhere the etching is blocked by mask 115 to define a cleared region 119.The RIE process includes a first phase, during which etching isdirectional to obtain a substantially straight profile for the gate line118A, and a second phase, during which the gate line 118A is trimmedsideways by an amount sufficient to clear the gate material under thereshaped nanowires 108 in the regions outside the gate stack 118. Thegate etching can include the etching of the thin gate conductor 117, asshown in FIGS. 4A and 4B, or it can be limited to an etching of thepoly-Si 113 while leaving the thin gate conductor 117 relatively intact,as illustrated in FIGS. 4C and 4D.

Poly-germanium or another suitable composition can be used as asubstitute to poly-Si 113 and, in this case, the poly-germanium canlater be reacted with a germanide forming metal such as nickel.Additionally, any poly-SiGe alloy can also be used to substitute poly-Si113. Still further, poly-Si 113 can be deposited in a poly-crystallineform or deposited in an amorphous form which is later transformed intopoly-Si when exposed to high temperature.

With reference to FIGS. 5 and 6, a metal 116, such as nickel (Ni),platinum (Pt), cobalt (Co), tungsten (W) and/or titanium (Ti), for usein silicide formation is then blanket deposited over the device. Themetal 116 covers horizontal surfaces and inner and outer sidewalls ofthe poly-Si 113. The metal 116 is annealed and, once annealed, reactswith the poly-Si 113 to form a silicide 120, as shown in FIG. 6. In thepresent embodiment, the “FUSI first” silicide 120 formation propagatesgenerally sideways and, for particularly short FUSI gates, such as gatesthat are 50 nm or less in length, this sideways directed silicide 120formation enables the deposition of relatively thin metal layers sincethe reaction takes place from both gate sidewalls. The formation ofsilicide 120 by sidewall reaction is, in some cases, more beneficialthan the conversion of the poly-Si 113 gate to silicide by reacting thesilicide forming metal 116 from the top surface of the poly-Si 113 gatedownward.

The choice of silicide 120 is at least partially made to induce radialstrain and, optionally, longitudinal strain in the reshaped nanowire 108channel and is generally free of other considerations related tothreshold voltage tuning since it is the thin gate conductor 117 and notthe silicide 120 that sets the gate conductor work function.Additionally, since dopant incorporation for source/drain formation iscarried out later in the process flow the choice of the silicide 120 tobe employed is not limited by the silicide 120 formation temperature.For example, TiSi₂, which forms at about 750° C., can be used. Followingthe silicide 120 formation, unreacted metal 116 may be selectivelyetched with respect to the silicide 120 and the dielectric surfaces(e.g. 112, 102 and 115).

With reference now to FIGS. 7-9, if the exposed TaN film 117 was notremoved during the gate etch as described in the embodiment of FIGS. 4Cand 4D, it is now selectively etched with respect to the silicide 120and the gate dielectric 112. Gate sidewall spacers 121 are then formedand epitaxy 122 may be selectively used to thicken the reshaped nanowire108 portions that are not encapsulated by the gate stack 118 andsidewall spaces. The SOI pads 103A may also be thickened as necessary byepitaxy 122. Epitaxy 122 can include in-situ doping to incorporatedopants into the source/drain regions. Alternatively, ion-implantationcan be used to dope the source and drain region. As shown in FIG. 9,self-aligned silicide is applied to form silicide 124 over the sourceand drain.

In accordance with further embodiments, the methods disclosed herein canbe applied to an omega-shaped gate nanowire FET, where the nanowire104/reshaped nanowire 108 is attached to the buried oxide 102 such thatit is not suspended. In this non-suspended case, however, the strainprofile may not have perfect radial symmetry. Volume expansion plays asmaller role in producing stress in the silicided films, and it isassumed that thermal mismatch between the silicide 120 and the nanowire104/reshaped nanowire 108 is a main contributor to stress. As such, anintensity of the induced strain can be controlled and tuned by changesin the silicide formation temperature. In general, the higher theformation temperature, the higher the induced strain due to thermalmismatch.

The above embodiments describe a method and structure to induce radialstrain in a nanowire FET channel. The radial strain can be decoupledfrom the longitudinal strain. The choice of stressor (FUSI) does notchange the gate stack properties (work function).

While the disclosure has been described with reference to exemplaryembodiments, it will be understood by those skilled in the art thatvarious changes may be made and equivalents may be substituted forelements thereof without departing from the scope of the disclosure. Inaddition, many modifications may be made to adapt a particular situationor material to the teachings of the disclosure without departing fromthe essential scope thereof. Therefore, it is intended that thedisclosure not be limited to the particular exemplary embodimentdisclosed as the best mode contemplated for carrying out thisdisclosure, but that the disclosure will include all embodiments fallingwithin the scope of the appended claims.

What is claimed is:
 1. An intermediate process device, comprising: ananowire connecting first and second silicon-on-insulator (SOI) pads; agate including a gate conductor surrounding an entire length of thenanowire and poly-Si surrounding the gate conductor, the entire lengthof the nanowire being defined as all upper, lower and side surfaces ofthe nanowire along the length of the nanowire; and silicide formingmetal disposed to react with the poly-Si to form a fully silicided(FUSI) material to induce radial strain in the nanowire.
 2. The deviceaccording to claim 1, wherein a material of the gate conductor isselected from the group comprising tantalum nitride (TaN) and titaniumnitride (TiN).
 3. The device according to claim 1, wherein the gateconductor comprises a film having a thickness of about 2-4 nm.
 4. Thedevice according to claim 1, wherein the fully silicided materialcomprises a silicide that forms above about 550° C.
 5. The deviceaccording to claim 1, wherein the fully silicided material comprises atleast one of nickel (Ni), platinum (Pt), cobalt (Co), tungsten (W) andtitanium (Ti).
 6. The device according to claim 1, wherein a material ofthe gate conductor is determinative of a work function of the gateconductor independent of the fully silicided material.
 7. Anintermediate process device, comprising: first and second pads; ananowire, formed in a silicon-on-insulator (SOI) layer disposed over aburied oxide (BOX) layer, connecting the first and second pads; a gatesurrounding an entire length of the nanowire and including a dielectricadjacent the nanowire, a gate conductor adjacent the dielectric andpoly-Si surrounding the gate conductor, the entire length of thenanowire being defined as all upper, lower and side surfaces of thenanowire along the length of the nanowire; and silicide forming metaldisposed at least along sidewalls of the poly-Si to react with thepoly-Si to form a fully silicided (FUSI) material to induce radialstrain on the nanowire.
 8. The device according to claim 7, wherein thenanowire is substantially cylindrical.
 9. The device according to claim7, wherein the gate perimetrically surrounds the nanowire.
 10. Thedevice according to claim 7, wherein a material of the dielectric isselected from the group comprising silicon dioxide (SiO₂), siliconoxynitride (SiON) and hafnium oxide (HfO₂).
 11. The device according toclaim 7, wherein a material of the gate conductor is selected from thegroup comprising tantalum nitride (TaN) and titanium nitride (TiN). 12.The device according to claim 7, wherein the gate conductor comprises afilm having a thickness of about 2-4 nm.
 13. The device according toclaim 7, wherein the fully silicided material comprises a silicide thatforms above about 550° C.
 14. The device according to claim 7, whereinthe fully silicided material comprises at least one of nickel (Ni),platinum (Pt), cobalt (Co), tungsten (W) and titanium (Ti).
 15. Thedevice according to claim 7, wherein a material of the gate conductor isdeterminative of a work function of the gate conductor independent ofthe fully silicided material.
 16. A device, comprising: a nanowireconnecting first and second silicon-on-insulator (SOI) pads; a gateconductor surrounding an entire length of the nanowire, the entirelength of the nanowire being defined as all upper, lower and sidesurfaces of the nanowire along the length of the nanowire; poly-Sisurrounding the gate conductor; and silicide forming metal disposablefor reaction with the poly-Si to thereby form a fully silicided (FUSI)material disposable to induce radial strain in the nanowire.
 17. Thedevice according to claim 16, wherein a material of the gate conductoris selected from the group comprising tantalum nitride (TaN) andtitanium nitride (TiN).
 18. The device according to claim 16, whereinthe gate conductor comprises a film having a thickness of about 2-4 nm.19. The device according to claim 16, wherein the fully silicidedmaterial comprises a silicide that forms above about 550° C.
 20. Thedevice according to claim 16, wherein the fully silicided materialcomprises at least one of nickel (Ni), platinum (Pt), cobalt (Co),tungsten (W) and titanium (Ti).